Each chip is provided with conformal doped silicon glass layers which are covered on the silicon nitride layer and are covered on the gate structure and which have predetermined thickness.

每个所述芯片具有覆盖在所述氮化硅层和所述栅极结构上的具有预定厚度的共形的掺杂硅玻璃层。

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On the other hand, it is essential to prepare high quality silicon nitride thin film for gate insulator layer of TFT in order to get excellent TFT.

与此同时，制备高质量的栅绝缘层用氮化 硅薄膜也是制备高性能薄膜晶体管（TFT）这一课题的需要。

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